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Analytical and Experimental Study of Wide Tuning Range mm-Wave CMOS LC-VCOs

机译:宽调谐范围毫米波CMOS LC-VCO的分析和实验研究

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The unprecedented interest in high bandwidth applications in the mm-wave range has set off a wave of research exploring techniques that enable wide tuning range voltage-controlled oscillators (VCOs). Low frequency CMOS LC-VCOs (${<} 10$ GHz) have been well studied in the literature and several approaches have been developed to optimize their performance. However, there lie several interesting challenges in the mm-wave space, specifically close to the $f_T/f_{max}$, that motivate the need for analyzing the tuning range and phase noise in mm-wave VCOs. This paper presents a detailed analysis of the ultimate performance bound in simultaneously achieving low phase noise and wide tuning range in CMOS VCOs. The analysis is conducted on a 130 nm CMOS process, and confirmed by measurement results on three VCOs at 26 GHz, 34 GHz and 40 GHz. Finally, the impact of CMOS technology scaling (from 130 nm down to 45 nm), on the achievable performance bounds is analyzed and presented.
机译:在毫米波范围内对高带宽应用的空前兴趣引起了一系列研究探索技术的浪潮,这些技术使得能够实现宽调谐范围的压控振荡器(VCO)。低频CMOS LC-VCO($ {<} 10 $ GHz)在文献中已得到充分研究,并且已开发出几种方法来优化其性能。但是,在毫米波空间中存在一些有趣的挑战,特别是接近$ f_T / f_ {max} $,这激发了对毫米波VCO中调谐范围和相位噪声进行分析的需要。本文对同时实现CMOS VCO中的低相位噪声和宽调谐范围的最终性能界限进行了详细分析。分析是在130 nm CMOS工艺上进行的,并通过在26 GHz,34 GHz和40 GHz上的三个VCO的测量结果得到证实。最后,分析并介绍了CMOS技术缩放(从130 nm减小到45 nm)对可达到的性能范围的影响。

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