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High frequency performance of GE high density interconnect modules

机译:GE高密度互连模块的高频性能

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The layout and routing of high-frequency multichip modules (MCMs) require a detailed electromagnetic characterization of the interconnect structure in order to manage required design trade-offs intelligently. To provide this characterization for the GE high-density-interconnect (HDI) process, a number of test coupons containing a variety of transmission line structures were prepared. S-parameter data were measured using a vector network analyzer (VNA), and these measured data were compared to the theoretical predictions based upon classical transmission line theory. Reasonable agreement is obtained provided that skin and proximity effects in the lines and ground planes are taken into account and that the nonrectangular natures of the conductor cross sections are accurately modeled. Results suggest that insertion loss rather than crosstalk is likely to be limiting for frequencies up to 9 GHz. For 20% (2-dB) attenuation, line lengths are 3-12 cm for the frequency range of 1-9 GHz.
机译:高频多芯片模块(MCM)的布局和布线需要对互连结构进行详细的电磁表征,以便智能地管理所需的设计折衷。为了提供GE高密度互连(HDI)工艺的这种特性,制备了许多包含各种传输线结构的测试样片。使用矢量网络分析仪(VNA)测量S参数数据,并将这些测量数据与基于经典传输线理论的理论预测进行比较。只要考虑到线和接地平面中的趋肤效应和邻近效应,并正确建模导体横截面的非矩形特性,就可以得出合理的协议。结果表明,对于9 GHz以下的频率,插入损耗而非串扰可能会受到限制。对于20%(2-dB)的衰减,对于1-9 GHz的频率范围,线长为3-12 cm。

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