首页> 外文期刊>IEEE Transactions on Circuits and Systems. II >A comprehensive design method for dual-gate MOSFET mixers
【24h】

A comprehensive design method for dual-gate MOSFET mixers

机译:双栅极MOSFET混频器的综合设计方法

获取原文
获取原文并翻译 | 示例
           

摘要

A comprehensive design method for a dual-gate MOSFET (DGFET) mixer is proposed which provides a practical procedure to predict both the conversion gain and input compression point and to identify optimal bias conditions and local oscillator (LO) power level. Each step in the process can be implemented by either simulation or experimental methods and is suitable for both up-conversion or down-conversion. The technique is aimed at producing a well engineered design, not a rigorous numerical solution. Using a discrete packaged device, a single-balanced DGFET down-converter mixer circuit is designed and characterized using an RF input frequency of 857 MHz, LO frequency of 694 MHz, and an IF output frequency of 163 MHz.
机译:提出了一种用于双栅极MOSFET(DGFET)混频器的综合设计方法,该方法提供了一种实用的程序来预测转换增益和输入压缩点,并确定最佳偏置条件和本地振荡器(LO)功率水平。该过程中的每个步骤都可以通过仿真或实验方法来实现,并且适用于上转换或下转换。该技术旨在提供精心设计的设计,而不是严格的数值解决方案。使用分立封装器件,设计了单平衡DGFET下变频器混频器电路,并使用857 MHz的RF输入频率,694 MHz的LO频率和163 MHz的IF输出频率对其进行了表征。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号