DUAL-GATE MOSFET BASED MEMORY ELEMENT AND MANUFACTURING METHOD THEREOF

摘要

Disclosed are a dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) based memory element and a manufacturing method thereof. The manufacturing method of the dual-gate MOSFET based memory element comprises the following steps of: forming an oxide film on a bulk silicon substrate; depositing polysilicon on the oxide film; heat-treating and crystallizing the polysilicon; depositing a plurality of gate insulating films spaced apart from each other on the polysilicon; forming a floating gate and a control gate by depositing a gate metal on the plurality of gate insulating films; and doping impurities in a first region and a second region of the polysilicon in which the gate insulating films are not deposited to form a source region and a drain region, respectively.;COPYRIGHT KIPO 2020