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A comprehensive design method for dual-gate MOSFET mixers

机译:双栅极MOSFET混频器的综合设计方法

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A comprehensive design method for a dual-gate MOSFET (DGFET) mixernis proposed which provides a practical procedure to predict both thenconversion gain and input compression point and to identify optimal biasnconditions and local oscillator (LO) power level. Each step in thenprocess can be implemented by either simulation or experimental methodsnand is suitable for both up-conversion or down-conversion. The techniquenis aimed at producing a well engineered design, not a rigorous numericalnsolution. Using a discrete packaged device, a single-balanced DGFETndown-converter mixer circuit is designed and characterized using an RFninput frequency of 857 MHz, LO frequency of 694 MHz, and an IF outputnfrequency of 163 MHz
机译:提出了一种用于双栅极MOSFET(DGFET)混频器的综合设计方法,该方法提供了一种实用的程序来预测转换增益和输入压缩点,并确定最佳偏置条件和本地振荡器(LO)功率水平。随后处理中的每个步骤都可以通过仿真或实验方法来实现,并且适用于上转换或下转换。该技术旨在产生精心设计的设计,而不是严格的数字解决方案。使用分立封装器件,设计了单平衡DGFETn下变频器混频器电路,其特征是RFn输入频率为857 MHz,LO频率为694 MHz,IF输出n频率为163 MHz

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