机译:650V增强模式GaN HEMT用于低温冷却电力电子的表征及故障分析
Univ Tennessee Dept Elect Engn & Comp Sci Knoxville TN 37996 USA;
Univ Tennessee Dept Elect Engn & Comp Sci Knoxville TN 37996 USA;
Clemson Univ Zucker Family Grad Educ Ctr Restorat Inst N Charleston SC 29405 USA;
Univ Tennessee Dept Elect Engn & Comp Sci Knoxville TN 37996 USA;
Univ Tennessee Dept Elect Engn & Comp Sci Knoxville TN 37996 USA;
Univ Tennessee Dept Elect Engn & Comp Sci Knoxville TN 37996 USA|Oak Ridge Natl Lab POB 2009 Oak Ridge TN 37830 USA;
Univ Tennessee Dept Elect Engn & Comp Sci Knoxville TN 37996 USA|Oak Ridge Natl Lab POB 2009 Oak Ridge TN 37830 USA;
Univ Tennessee Dept Elect Engn & Comp Sci Knoxville TN 37996 USA;
Univ Tennessee Dept Elect Engn & Comp Sci Knoxville TN 37996 USA;
NASA Glenn Res Ctr Cleveland OH 44135 USA;
Cryogenically cooled power electronics; gallium nitride high-electron mobility transistors (GaN HEMTs); failure analysis; static and dynamic characterizations; ultrafast switching speed;
机译:通过加速功率循环测试分析商用650 V离散型GaN-on-Si HEMT电源器件的断态漏源漏电流故障机理
机译:GaN HEMT中用于电力电子应用的交叉耦合和衬底电容的分析和建模
机译:正向偏置肖特基型P-GAN门垫中低温时间与故障行为的特征与分析
机译:650V增强型GaN HEMT的表征
机译:高功率电子设备的建模与鉴定:闪光沸腾和GAN HEMT可靠性造型激光二极管的系统分析
机译:面向增强模式特性的具有双AlGaN势垒设计的嵌入式栅AlGaN / GaN MIS-HEMT研究
机译:三维仿真支撑的SiC基板上AlGaN / GaN Multifiger功率HEMTS热性能的高级表征技术及分析