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Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

机译：三维仿真支撑的SiC基板上AlGaN / GaN Multifiger功率HEMTS热性能的高级表征技术及分析

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Aleš Chvála; Robert Szobolovszký; Jaroslav Kováč; Martin Florovič; Juraj Marek; Ľuboš Černaj; Daniel Donoval; Christian Dua; Sylvain L. Delage; Jean-Claude Jacquet;
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1. Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation [J] . Chvala Ales, Szobolovszky Robert, Kovac Jaroslav Jr., Journal of Electronic Packaging . 2019,第3期

机译：三维模拟支持的SiC衬底上AlGaN / GaN多指功率HEMT的先进表征技术和热性能分析
2. Modeling, Simulation and Analysis of Thermal Resistance in Multi-finger AlGaN/GaN HEMTs on SiC Substrates [J] . WANG Jian-Hui, WANG Xin-Hua, PANG Lei, 中国物理快报：英文版 . 2012,第008期

机译：SiC衬底上多指AlGaN / GaN HEMT的热阻建模，仿真和分析
3. Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects [J] . E.R. Heller, A. Crespo Microelectronics reliability . 2008,第1期

机译：多指AlGaN / GaN HEMT器件操作的电热建模，包括热衬底效应
4. Thermal analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC substrate through TCAD simulations and measurements [C] . A. K. Sahoo, N. K. Subramani, J-C. Nallatamby, European Microwave Integrated Circuits Conference . 2016

机译：通过TCAD模拟和测量对在Si和SiC衬底上生长的AlN / GaN / AlGaN HEMT进行热分析
5. Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface [D] . Suri, Suraj. 2016

机译：GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
6. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate [O] . Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, 2021

机译：在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散
7. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate [O] . Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, 2021

机译：在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

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