High-resistivity polycrystalline silicon as RF substrate in wafer-level packaging

摘要

High-resistivity polycrystalline silicon (HRPS) is presented as a novel low-cost and low-loss substrate for radio-frequency (RF) passive components in wafer-level packaging and integrated passive networks. A record quality factor (Q=11; 1 GHz; 34 nH) and very low loss (0.65 dB/cm; 17 GHz) are demonstrated for inductors and coplanar waveguides, respectively, on HRPS.