Hot-carrier degradation mechanism for p-type symmetric LDMOS transistor with thick gate oxide

摘要

Hot-carrier-induced degradation in the p-type symmetric lateral DMOS transistor (ps-LDMOS) with thick gate oxide has been experimentally investigated. It is noted that only one peak bulk current is observed for different V_gs owing to the Kirk effect hardly happening in the ps- LDMOS. Experimental results also show that interface state generates in the channel and p-drift regions; however, hot electron injection and trapping into the oxide of the p-drift region dominates the degradation, leading to the on-resistance (R_on) decrease. Moreover, no hot-carrier injection is found in the channel region. Charge pumping measurements and T-CAD simulations have been performed to verify the experimental findings.