Integrated circuit for use with input transistor, has gate electrode, where gate oxide of input transistor is twenty five times thicker than standard gate oxide of standard metal oxide semiconductor transistor of integrated circuit

摘要

The integrated circuit has an input transistor, a gate oxide and a gate electrode (110). The gate oxide of the input transistor is 25 times thicker than a standard gate oxide of a standard metal oxide semiconductor transistor of integrated circuit. The gate electrode is directly connected with an input connection of the integrated circuit. An independent claim is included for an input transistor.