1.3-µm buried-heterostructure VCSELs with GaAs/AlGaAs metamorphic DBRs grown by MOCVD

摘要

The authors report buried-heterostructure long-wavelength VCSELs with GaAs/AlGaAs metamorphic DBRs, which has a potential for low thermal resistance and operation in the single transverse mode with a large emission area. In spite of their being upside-up and unmounted, they achieve CW operation at 17 degrees C, and VCSELs with a 15-mu m mesa exhibit single-mode operation.