Positron Annihilation Spectroscopy of AlGaAs/GaAs Interfaces in MOCVD-Grown GaAs Heterojunction Solar Cells

摘要

The defect density profile of high efficiency epitaxial MOCVD-grown GaAs heterojunction solar cell structures has been characterized using a variable-energy positron beam. By control of the implantation depth of positrons, spatial defect changes, film thickness variations, and possibly interfacial space charge and disorder may be resolved from annihilation characteristics. Correlations have been made relating positron annihilation spectroscopy (PAS) measurements to SPV data, band bending, and known MOCVD growth parameter variations. 11 refs., 4 figs., 1 tab. (ERA citation 13:015247)