1.55-Μm buried-heterostructure VCSELs with InGaAsP/lnP-GaAs/AlAsDBRs on a GaAs substrate

摘要

We demonstrate 1.55-Μm buried-heterostructure (BH)nvertical-cavity surface-emitting lasers (VCSELs) on a GaAs substrate.nThin-film wafer-fusion technology enables InP-based BH VCSELs to benfabricated on GaAs/AlAs distributed Bragg reflectors. Detailedninvestigations of the device resistance are also described. As a resultnof introducing BH and obtaining low device resistance, the thresholdncurrent density under CW operation shows the independence of mesa sizendue to a strong index guide and small noneffective current. A 5-ΜmnVCSEL exhibits a record threshold current of 380 ΜA at 20°C. ThisnVCSEL also operates with single transverse mode up to the maximumnoptical output power