1.55 /spl mu/m vertical-cavity surface-emitting lasers with wafer-fused InGaAsP/lnP-GaAs/AlAs DBRs

摘要

The authors propose a novel 1.55 /spl mu/m vertical-cavity surface-emitting laser (VCSEL) structure with wafer-fused InGaAsP/lnP-GaAs/AlAs distributed Bragg reflectors. The resonant-cavity wavelength before wafer fusion is in exact accord with the emission wavelength, and a 25 /spl mu/m diameter VCSEL exhibits CW operation at 27/spl deg/C.