Bistability in an AlAs-GaAs-InGaAs Vertical-Cavity Surface-Emitting Laser

摘要

Data are presented demonstrating bistability in the current versus voltage andlight versus current characteristics of a quantum well vertical cavity surface emitting laser. The laser structures are grown using molecular beam epitaxy, and use an AlAs/GaAs Bragg reflector for the n-side mirror, and a combination of AlAs/GaAs and either ZnSe/CaF2 or Si/SiO2 quarter-wave dielectric layers for the p-side mirror. Regrowth of molecular beam epitaxial layers is used for current funneling into the device action region. Light emission is measured from the epitaxial side of the device, and threshold currents range from 2 to 4 mA. The bistability stems from switching in a parasitic pnpn structure triggered by lasing in the vertical cavity laser, with the observed hysteresis width influenced by leakage current around the device action region.