A QUANTUM FACTOR CORRECTION FOR MODELLING THE C-V CHARACTERISTICS OF THE MOS-SOI STRUCTURE

M. BADRI; F. A. IKRAIAM; B. MAJKUSIAK

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A QUANTUM FACTOR CORRECTION FOR MODELLING THE C-V CHARACTERISTICS OF THE MOS-SOI STRUCTURE

机译：MOS-SOI结构的C-V特性建模的量子因子校正

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摘要

A quantum correction factor applying to the MOS-SOI system has been adapted from previous works and modified for the MOS-SOI systems to take into account the quantum mechanical correction for the energy quantization of carriers in modelling the C-V characteristics of these structures.

机译：应用于MOS-SOI系统的量子校正因子已经从先前的工作中进行了修改，并已针对MOS-SOI系统进行了修改，以在对这些结构的C-V特性建模时考虑到载流子能量量化的量子力学校正。

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《Electron Technology》 |1999年第2期|p.130-132|共3页
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M. BADRI; F. A. IKRAIAM; B. MAJKUSIAK;
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中图分类无线电电子学、电信技术;
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A QUANTUM FACTOR CORRECTION FOR MODELLING THE C-V CHARACTERISTICS OF THE MOS-SOI STRUCTURE

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