Quantum mechanical self consistent simulation and analytical modeling for C-V characterization of high-K gate AlInN/AlN/GaN MOS-HEMT structure featuring negative capacitance in AlInN layer

摘要

In this paper, electrostatic behaviour of AlInN/(AlN)/GaN hetero-structure has been studied from self-consistent simulation and analytical modeling. Depletion and enhancement mode of the device have been simulated and analyzed by varying the thickness of AlInN layer. 2DEG charge density is found in range of 1 × 10¹³ cm^-2 which is very much convenient for high mobility transport. It is found that AlInN layer shows negative capacitance around flatband region. The change in conduction band with applied gate voltage is observed for both modes of operation. The variation of 2DEG charge density with gate voltage is formulated analytically using triangular quantum well approach. Finally, CV curves obtained from self-consistent simulation and analytical modeling are compared with the experimental results.