Effect of the Gate Electrode on the C-V Characteristics of the Structure M-TmF sub 3 -SiO sub 2 -Si

摘要

The C-V characteristics of the structure M-TmF sub 3 -SiO sub 2 -Si, thermally treated at a temperature of 300 exp 0 C for 15 minutes, were investigated. At higher temperatures to about 150 exp 0 C, the hysteresis of the C-V characteristics is completely absent, whereas at room temperature hysteresis depends on the applied voltage and on the material of the gate electrode. The dependence of the flat band voltage shift on the applied voltage, the thickness of SiO sub 2 layer and the material of the gate electrode were measured. (Atomindex citation 13:660329)