A two-dimensional analytical model of threshold voltages of short-channel MOSFETs with Gaussian-doped channels

摘要

A two-dimensional analytical model for the threshold voltage of a short-channel MOSFET with a Gaussian-doped channel has been developed. The Gaussian profile has been simulated by a novel integrable function. This makes possible a purely analytical solution of the two-dimensional Poissons equation in the channel region of the MOSFET.