Numerical analysis of the frequency-dependent output conductance of GaAs MESFET's

摘要

The small-signal output conductance of GaAs MESFETs on semi-insulating substrate is studied using two-dimensional numerical analysis. Frequency-, temperature-, and drain-bias-dependent behaviours of the output conductance are analysed. It is confirmed that the bulk EL2 traps contribute significantly to the low-frequency-dependent behavior of the output conductance. Devices with different background trap concentrations and acceptor concentrations were analyzed and compared. For devices with higher trap concentrations, the output conductance is lower but exhibits stronger frequency dependence.