Modeling of Gunn Domain Effects in the Output Conductance of the High-FrequencySmall-Signal GaAs MESFET Equivalent Circuit

摘要

A time-delay element associated with the output conductance has been included inthe small-signal GaAs MESFET equivalent circuit to model high field Gunn domain effects. From experimental data collected to 40 GHz, this phenomenon primarily contributes to the decreasing of the output conductance with increasing frequency which significantly affects the magnitude of the S-parameter S22.... FET Modeling, Gunn domain effects, Equivalent circuit.