A model for analyzing the interface properties of a semiconductor-insulator-semiconductor structure. II. Transient capacitance technique

摘要

For pt.I see ibid., vol.39, no.7, p.1740-46 (1992). A bias-scan deep-level transient spectroscopy (DLTS) method for measuring interface states in a semiconductor-insulator-semiconductor (SIS) capacitor structure is described. Introducing a charge coupling factor between the film/oxide (F/O) and the substrate/oxide (S/O) interfaces made it possible to extract interface trap densities from the measured transient signals. This technique was used to determine the interface trap densities and capture cross sections at both the F/O and S/O interfaces of SIMOX (separation by implantation of oxygen) based SIS capacitors.