A model for analyzing the interface properties of a semiconductor-insulator-semiconductor structure. I. Capacitance and conductance techniques

摘要

A model is presented for analyzing the interface properties of a semiconductor-insulator-semiconductor (SIS) capacitor structure. By introducing a coupling factor, conventional metal-oxide-semiconductor (MOS) capacitor theory is extended to analyze the interface properties of the film/buried-oxide/substrate interfaces of a silicon-on-insulator (SOI) material. This model was used to determine parameters such as doping concentration, buried oxide thickness, fixed oxide charge, and interface trap density from the SIMOX (separation by implantation of oxygen) based SIS capacitors.