Surface passivation of backside-illuminated indium antimonide focal plane array

摘要

A novel surface passivation tailored to a two-dimensional array of small-area, gate-controlled InSb photovoltaic diodes fabricated on etch-thinned bulk InSb wafers, with backside illumination, is presented. The surface passivation is based on a controlled surface treatment that reduces the native oxide and is followed by photon-assisted deposition of SiO/sub x/. Thinned bulk n-type InSb with