Photoelectric Characteristics of Focal Plane Arrays Based on Epitaxial Layers of Indium Antimonide Deposited on a Heavily Doped Substrate

摘要

Photoelectric characteristics of a 320 x 256-element focal plane array (FPA) with a pitch of 30 mu m, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1 : 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb.