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Quantum efficiency and crosstalk of an improved backside-illuminated indium antimonide focal-plane array

机译:改进的背照式锑化铟焦平面阵列的量子效率和串扰

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摘要

The quantum efficiency and crosstalk of backside-illuminated indium antimonide photodiodes in hybrid focal plane arrays are calculated. An improved structure with crosswise ohmic contacts at the backside of the thinned InSb substrate is described. The simulations predict a significant reduction in the crosstalk while retaining high quantum efficiency.
机译:计算了混合焦平面阵列中背照式锑化铟铟光电二极管的量子效率和串扰。描述了在减薄的InSb衬底的背面具有横向欧姆接触的改进结构。仿真预测串扰将显着降低,同时保持高量子效率。

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