High performance symmetric double /spl delta/-doped GaAs/InGaAs/GaAs pseudomorphic HFETs grown by MOCVD

摘要

High performance double /spl delta/-doped GaAs/In/sub 0.25/Ga/sub 0.75/ As/GaAs pseudomorphic HFETs grown by low pressure MOCVD are reported. An extrinsic transconductance as high as 390 mS/mm, and a saturation current density as high as 980 mA/mm along with broad transconductance plateau at 300 K with a 1.5 /spl mu/m gate length, are achieved.