Enhanced resonant tunneling real-space transfer in /spl delta/-doped GaAs/InGaAs gated dual-channel transistors grown by MOCVD

摘要

We report the observation of pronounced N-shaped negative differential resistance (NDR) and negative transconductance at high drain and gate fields in /spl delta/-doped GaAs/InGaAs gated dual-channel transistors (DCTs) by tunneling real-space transfer (TRST). By virtue of varying the sheet density of the /spl delta/-doping layer as well as the thickness of the GaAs barrier, pronounced multiple-state NDR characteristics were obtained accompanying the gate current characteristic at room temperature. A peak-to-valley current ratio (PVR) of 15 was obtained which, to our knowledge, is the highest among the reported TRST devices at room temperature. The proposed devices possess potential advantages of ease of growth and fabrication.