High Frequency Transistors on MOCVD Grown InGaAs/InP.

摘要

InGaAs MISFETs with 1 mum gate lengths and up to 1 mm gate widths have demonstrated an output power density of 1.06 W/mm at 9.7 GHz with a corresponding power gain and power-added efficiency of 4.3 dB and 38%, respectively. A novel plasma deposited silicon/silicon oxide gate insulator was employed to achieve an output power stability within 1.2% over 24 hours of continuous operation.