An analytical model for the optimization of source-side injection flash EEPROM devices

摘要

This paper presents an analytical model for the description of the programming operation in split-gate source-side injection flash memory devices. From a dual-gate MOS model and from device simulations, it is found that the lateral field is almost independent of the floating-gate voltage which focuses the description of the gate current during programming on the physics of the Si-SiO/sub 2/ barrier lowering effect. The traditional Lucky Electron Model is used to accurately describe the gate current and, therefrom, the programming characteristic is calculated analytically with a minor approximation. The validity and the usefulness of the model for device design purposes is demonstrated by comparing the results to experimental data obtained from flash EEPROM cells fabricated in a 1.2 /spl mu/m and a 0.7 /spl mu/m technology, respectively.