WRITE/ERASE DEGRADATION AND DISTURB EFFECTS IN SOURCE-SIDE INJECTION FLASH EEPROM DEVICES

摘要

An in-depth analysis of the write/erase degradation of source-side injection flash EEPROM devices is performed, which reveals two mechanisms underlying this degradation: a decrease of the charge per cycle on the floating gate, accompanied by the series effect of oxide and interface charges locally trapped above the channel. In addition, the main disturb effects are characterized and shown to be non-critical for reliable cell operation.