Grounded-gate nMOS transistor behavior under CDM ESD stress conditions

摘要

This paper contains a systematic study into the effects of design and process variations on the behavior of the grounded-gate nMOS transistor under CDM ESD stress conditions. The correlation of both electrical behavior and physical failure is evaluated for socketed CDM, nonsocketed CDM, and HBM ESD stress models. It is shown that a new compact transistor model, concerning its application for the simulation of CDM behavior, is employed in electro-thermal simulation to explain the experimental results.