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首页> 外文期刊>IEEE Transactions on Electron Devices >Comments on 'On the base profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues'
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Comments on 'On the base profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues'

机译:关于“针对77 K应用的外延Si和SiGe基双极技术的基本轮廓设计和优化。II。电路性能问题”的评论

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摘要

For the original paper see ibid., vol. 40, p. 542-555 (1993). The base transit time of the trapezoidal Ge base profile for the SiGe bipolar transistor has been evaluated. The analytical equations derived in the aforementioned paper result in significant error as the trapezoid profile is close to uniform Ge profile. In this work accurate analytical equations are derived. Comparisons between the present analytical predictions and previous published results are given.
机译:对于原始论文,请参见同上,第一卷。第40页542-555(1993)。已经评估了SiGe双极晶体管的梯形Ge基轮廓的基跃迁时间。由于梯形轮廓接近均匀的Ge轮廓,因此在上述论文中得出的解析方程会导致明显的误差。在这项工作中,得出了精确的解析方程。给出了目前的分析预测与先前发表的结果之间的比较。

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