Suspended SOI structure for advanced 0.1-/spl mu/m CMOS RF devices

摘要

Modern silicon-on-insulator (SOI) technology and 0.1-/spl mu/m-channel-length complementary metal oxide silicon (CMOS) devices make it possible to fabricate high-performance RF devices by using standard Si ULSI processes. Using the buried oxide layer of an SOI wafer as an etching stopper, we were able to integrate a suspended inductor, with high-inductor resonance-frequency of 19.6 GHz, and high-performance 0.1-/spl mu/m CMOS devices. Moreover, we experimentally show that this suspended CMOS has acceptable short-channel immunity. Using two-dimensional (2-D) simulation, we clarify that the gate-potential spread sufficiently suppresses the potential shifts, which results in good short-channel characteristics.