Noise performance of 0.35-(mu)m SOI CMOS devices and micropower preamplifier following 63-MeV, 1-Mrad (Si) proton irradiation

摘要

This paper presents measured noise for 0.35(mu)m, silicon-on-insulator devices and a micropower preamplifier following 63-MeV, 1-Mrad (Si) proton irradiation. Flicker noise voltage, important for gyros having low frequency output, increases less than 32 after irradiation.