Kink-free characteristics of AlSb/InAs high electron mobility transistors with planar Si doping beneath the channel

摘要

AlSb/InAs n-channel inverted-structure high electron mobility transistors (i-HEMT's) are realized by incorporating a Si doping sheet into a thin InAs layer that is embedded within the lower AlSb barrier. i-HEMT's with a 1 /spl mu/m /spl times/25 /spl mu/m gate size exhibit kink-free operation at room temperature with high drain current, high extrinsic transconductance, and low gate leakage. Results indicate potential for use in high-speed applications.