High current density Si field emission devices with plasma passivation and HfC coating

摘要

A novel self-aligned process was developed to fabricate gated Si field emission devices. At a gate voltage of 100 V, the emission current from an array of 100 tips increased from 283 to 460 /spl mu/A and the turn-on voltage decreased from 31 to 21 V after H/sub 2/ plasma passivation using an inductively coupled plasma (ICP) source for 2 min. The improvements correspond to a 1.28-eV reduction in the effective work function of the emitters and the instability of the emission current decreased from /spl plusmn/1,25 to /spl plusmn/0.25% after H/sub 2/ plasma passivation. Emitter tips were also coated with Mo silicide and HfC. The emission current increased from 230 /spl mu/A for uncoated emitters to 268 /spl mu/A for emitters coated with Mo silicide and 389 /spl mu/A for emitters coated with HfC. The turn-on voltage decreased from 50 to 41 and 25 V while the breakdown voltage increased from 126 to 129 and 143 V when Mo silicide and HfC were used for coating, respectively, which correspond to reductions of 0.95 and 2.23 eV, respectively, in the effective work function of the emitters. Single emitter tips have similar emission characteristics as high-density field emitter arrays, indicating excellent emission uniformity from the arrays.