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首页> 外文期刊>ACS applied materials & interfaces >Enhancement of the Stability of Electron Field Emission Behavior and the Related Microplasma Devices of Carbon Nanotubes by Coating Diamond Films
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Enhancement of the Stability of Electron Field Emission Behavior and the Related Microplasma Devices of Carbon Nanotubes by Coating Diamond Films

机译:涂覆金刚石薄膜增强碳纳米管电子场发射行为的稳定性及相关的微等离子体装置

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The enhanced lifetime stability for the carbon nanotubes (CNTs) by coating hybrid granular structured diamond (HiD) films on Au- decorated CNTs/Si using a two-step microwave plasma enhanced chemical vapor deposition process was reported. Electron field emission (EFE) properties of HiD/Au/CNTs emitters show a low turn-on field (E0) of 3.S0 V/μm and a high emission current density (J_e) of 0.64 mA/cm~2 at an applied field of 5.0 V/μm. There is no notable current degradation or fluctuation over a period of τ_(HiD/Au/CNTs) = 360 min for HiD/CNTs EFE emitters tested under a constant current of 4.5 μA. The robustness of the HiD/CNTs EFE emitter is overwhelmingly superior to that of bare CNTs EFE emitters (τ_(CNTs) = 30 min), even though the HiD/Au/CNTs do not show the same good EFE properties as CNTs, which are E0 = 0.73 V/μm and J_e = 1.10 mA/cm~2 at 1.05 V/μn. Furthermore, the plasma illumination (PI) property of a parallel-plate microplasma device fabricated using the HiD/Au/CNTs as a cathode shows a high Ar plasma current density of 1.76 mA/cm~2 at an applied field of 5600 V/cm with a lifetime of plasma stability of about 209 min, which is markedly better than the devices utilizing bare CNTs as a cathode. The CNT emitters coated with diamond films possessing marvelous EFE and PI properties with improved lifetime stability have great potential for the applications as cathodes in flat-panel displays and microplasma display devices.
机译:据报道,通过使用两步微波等离子体增强化学气相沉积工艺在Au装饰的CNTs / Si上涂覆混合颗粒结构的金刚石(HiD)膜,可以提高碳纳米管(CNTs)的寿命稳定性。 HiD / Au / CNTs发射器的电子场发射(EFE)特性在施加电压时具有3.S0 V /μm的低导通场(E0)和0.64 mA / cm〜2的高发射电流密度(J_e)场为5.0 V /μm。对于HiD / CNT,在4.5μA的恒定电流下测试的EFE发射器在τ_(HiD / Au / CNTs)= 360分钟内没有明显的电流衰减或波动。 HiD / CNTs EFE发射器的耐用性绝对优于裸CNTs EFE发射器(τ_(CNTs = 30分钟),即使HiD / Au / CNTs的EFE性能不如CNT。在1.05 V /μn时E0 = 0.73 V /μm,J_e = 1.10 mA / cm〜2。此外,以HiD / Au / CNT为阴极制造的平行板微等离子体装置的等离子照射(PI)性能在5600 V / cm的施加电场下显示出1.76 mA / cm〜2的高Ar等离子体电流密度。等离子体的寿命约为209分钟,这明显优于使用裸露的CNTs作为阴极的设备。涂有金刚石膜的CNT发射器具有出色的EFE和PI性能,并具有提高的使用寿命稳定性,在平板显示器和等离子显示器中用作阴极具有巨大的潜力。

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