首页> 外文会议>International Vacuum Nanoelectronics Conference >Enhancement on the stability of electron field emission behavior of carbon nanotubes by coating ultrananocrystalline diamond films
【24h】

Enhancement on the stability of electron field emission behavior of carbon nanotubes by coating ultrananocrystalline diamond films

机译:通过涂覆超纳米晶金刚石膜增强碳纳米管电子场发射行为的稳定性

获取原文

摘要

We report enhanced life-time stability for the carbon nanotubes (CNTs) by coating ultrananocrystalline diamond (UNCD) or hybrid granular structured diamond (HiD) films. Electron field emission (EFE) properties of UNCD/CNTs emitters show a turn-on field of 4.86 V/µm and an emission current density of 0.6 mA/cm2 at an applied field of 8.7 V/µm. There are no notable current degradations or fluctuations over a period of τUNCD/CNTs=228 min for UNCD/CNTs emitters at an applied current of 45 µA. The robustness of UNCD/CNTs emitter is overwhelmingly superior to the lifetime stability of bare CNTs emitters (τCNTs=40 min), even though the bare CNTs possess much better EFE properties (E0=0.73 V/µm, Je=1.1 mA/cm2 at 1.05 V/µm, with). The HiD/CNTs emitters exhibited even better EFE properties, i.e., turn-on field of 3.5 V/µm and EFE current density of 0.64 mA/cm2 at 5.0 V/µm with longer lifetime of tHiD/CNTs=275 min. Furthermore, the plasma illumination (PI) property of a parallel-plate microplasma device fabricated using the UNCD/CNTs (or HiD/CNTs) as cathode shows a high Ar plasma current density of 1.56 mA/cm2 (or 1.56 mA/cm2) at an applied field of 5600 V/cm with lifetime plasma stability of 130 min (or 180 min). The diamond films coated CNTs emitters, which possess marvelous EFE and PI properties with improved lifetime stability, have great potential for the applications as cathodes in flat panel displays and microplasma display devices.
机译:我们报告通过涂覆超纳米晶金刚石(UNCD)或杂化颗粒结构金刚石(HiD)膜提高了碳纳米管(CNT)的使用寿命稳定性。 UNCD / CNTs发射器的电子场发射(EFE)特性显示出4.86 V / µm的开启场和在8.7 V / µm的施加场上的发射电流密度为0.6 mA / cm2。在45 µA的施加电流下,UNCD / CNTs发射器在τUNCD/ CNTs = 228分钟的时间内没有明显的电流下降或波动。即使裸露的CNT具有更好的EFE特性(E0 = 0.73 V / µm,Je = 1.1 mA / cm2,UNCD / CNTs发射器的耐用性也比裸露的CNTs发射器的寿命稳定性(τCNTs= 40分钟)绝对优越。 1.05 V / µm,含)。 HiD / CNTs发射器表现出更好的EFE特性,即在5.0 V / µm时的导通电场为3.5 V / µm,EFE电流密度为0.64 mA / cm2,tHiD / CNTs的使用寿命更长,= 275分钟。此外,使用UNCD / CNT(或HiD / CNT)作为阴极制造的平行板微等离子体装置的等离子照射(PI)性能显示在1.56 mA / cm2(或1.56 mA / cm2)的高Ar等离子体电流密度。 5600 V / cm的应用场,使用寿命为130分钟(或180分钟)。金刚石薄膜涂层的CNTs发射器具有出色的EFE和PI性能,并具有提高的使用寿命稳定性,在平板显示器和微等离子体显示器中用作阴极具有巨大的潜力。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号