LOW-CURRENT HIGH-DENSITY PLASMA NITRIDING METHOD AND LOW-CURRENT HIGH-DENSITY PLASMA NITRIDING DEVICE

摘要

PPROBLEM TO BE SOLVED: To provide a low-current high-density plasma nitriding method capable of depositing a nano-sized nitride on a surface of a product, and capable of increasing the thickness of a layer of a compound on the surface of the product, and to provid the device for the same. PSOLUTION: Gas for sputtering is introduced into a furnace to remove any residual gas and impurities on a surface of a test piece, nitrogen and hydrogen is introduced into the furnace, the power of the low current is applied to a multiple hollow cathode to generate plasma of high density, and the state of nitrogen plasma in the plasma is changed to form a nitride layer to the nano-size. The momentum and the reaction of ions passing through the multiple hollow cathode are maximized to generate plasma of high density, and a nitride layer of high hardness with less change of roughness can be deposited on the surface of the test piece. PCOPYRIGHT: (C)2009,JPO&INPIT