首页> 外文期刊>IEEE Transactions on Electron Devices >A Computationally Efficient Physics-Based Compact Bipolar Transistor Model for Circuit Design - Part I: Model Formulation
【24h】

A Computationally Efficient Physics-Based Compact Bipolar Transistor Model for Circuit Design - Part I: Model Formulation

机译:用于电路设计的基于物理的高效计算紧凑型双极晶体管模型-第一部分:模型公式化

获取原文
获取原文并翻译 | 示例

摘要

A compact bipolar transistor model is presented that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM and at the same time, from a computational point of view, suitable for simulating large circuits. The new model has been implemented in Verilog-A and, as compiled code, in various commercial circuit simulators. In Part I, the fundamental model formulation is presented along with a derivation of the most important equations. Experimental results are shown in Part II.
机译:提出了一种紧凑的双极晶体管模型,该模型结合了SPICE Gummel-Poon模型(SGPM)的简单性和HICUM的一些主要功能。这种新的模型称为HICUM / L0,它比SGPM更基于物理原理和精度,并且从计算的角度来看,它同时也适用于模拟大型电路。新模型已在Verilog-A中实现,并已作为编译代码在各种商用电路仿真器中实现。在第一部分中,介绍了基本模型公式以及最重要的方程式的推导。实验结果显示在第二部分。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号