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首页> 外文期刊>Electron Devices, IEEE Transactions on >ACCNT—A Metallic-CNT-Tolerant Design Methodology for Carbon-Nanotube VLSI: Concepts and Experimental Demonstration
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ACCNT—A Metallic-CNT-Tolerant Design Methodology for Carbon-Nanotube VLSI: Concepts and Experimental Demonstration

机译:ACCNT-碳纳米管VLSI的耐金属CNT设计方法:概念和实验演示

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摘要

We demonstrate ACCNT (pronounced as “accent”), a solution to the metallic-nanotube problem that does not require any metallic-nanotube removal of any kind. ACCNT uses asymmetrically correlated carbon nanotubes to achieve metallic-nanotube tolerance, delivering high on– off ratios $(hbox{10}^{4}{-} hbox{10}^{6})$ while preserving the current drive. In addition, this metallic-nanotube tolerance can be engineered arbitrarily close to 100%. We present the ACCNT concepts in detail, verifying the concepts and underlying assumptions via experimental results. We further demonstrate inverters using ACCNT and ACCNT scalability to a wafer scale. ACCNT marks the first demonstration of a VLSI-compatible metallic-nanotube-tolerant design methodology.
机译:我们演示了ACCNT(发音为“重音符号”),它是解决金属纳米管问题的一种解决方案,它不需要去除任何种类的金属纳米管。 ACCNT使用不对称相关的碳纳米管来达到金属纳米管公差,在保持当前驱动力的同时,提供高开/关比($ hbox {10} ^ {4} {-} hbox {10} ^ {6})$。此外,该金属纳米管公差可任意设计为接近100%。我们将详细介绍ACCNT概念,并通过实验结果验证概念和基本假设。我们进一步演示了使用ACCNT和ACCNT可扩展性达到晶圆级的逆变器。 ACCNT标志着VLSI兼容的耐金属纳米管设计方法的首次展示。

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