Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices

摘要

The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 $muhbox{A}$ and 5 nA, respectively, at $V_{rm read} = hbox{0.1} hbox{V}$. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and $-$3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over $sim!hbox{10}^{8} hbox{cycles}$ and a retention time of over ten years at 85 $^{circ}hbox{C}$ . These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.