Memory element i.e. bipolar switching memory element, for resistive RAM, has memory cell connected in series with another memory cell, where each cell exhibits two stable states with respective high and low electrical resistances

摘要

The element has a memory cell (A) connected in series with another memory cell, where each cell exhibits one stable state with high electrical resistance and another stable state with low electrical resistance. The element is transferable into a high-impedance state by applying write voltage in the former stable state and into another high-impedance state by applying another write voltage in the latter stable state. The memory element exhibits different electrical resistance values by applying read voltage, where amount of read voltage is smaller than the write voltages. Independent claims are also included for the following: (1) a method for operating a memory element, a stack of memory elements or a memory matrix (2) a method for determining a logical value of logic interconnection of two variables in an array of memory elements.