Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells

摘要

This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under $+$3 V/10 ns and $-$ 3 V/10 ns with a high-to-low resistance ratio of $ > hbox{10}^{4}$ . The device also showed an endurance of $ > hbox{10}^{9}$ cycles and a retention time of $ > hbox{10}^{4} hbox{s}$ at 85 $^{circ}hbox{C}$. The temperature-dependent studies of on/off states show that metallic conduction is responsible for on state, whereas semiconducting or insulating behaviors are clearly observed from off -state devices. These results show that ZrN-based RSM can be used as a promising RSM device.