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Bipolar Resistive-Switching Memory with a Single Diode Per Memory Cell
Bipolar Resistive-Switching Memory with a Single Diode Per Memory Cell
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机译:每个存储单元具有一个二极管的双极阻性开关存储
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摘要
According to various embodiments, a resistive-switching memory element and memory element array that uses a bipolar switching includes a select element comprising only a single diode that is not a Zener diode. The resistive-switching memory elements described herein can switch even when a switching voltage less than the breakdown voltage of the diode is applied in the reverse-bias direction of the diode. The memory elements are able to switch during the very brief period when a transient pulse voltage is visible to the memory element, and therefore can use a single diode per memory cell.
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