Design and Modeling of Nonvolatile Memories by Resistive Switching Elements

摘要

With the continued scaling in the nano ranges, the technology roadmap predicted by Moore's Law is becoming difficult to meet. So-called emerging technologies have been widely reported to supersede or complement CMOS. This type of design style is commonly referred to as "hybrid" because it exploits different characteristics of emerging technologies. This is very attractive for memories in which the modular (cell-based) organization of these systems is well suited to new technologies and innovative paradigms for design. This research presents new hybrid memory design which employ emerging technologies; such as memristor, phase change memory (PCM), programmable metallization cell (PMC), and racetrack memory (RM); and CMOS. By introduced new HSPICE macromodel of these emerging technologies and their memory applications such as the nonvolatile memory cell, CAM, TCAM, NVSRAM, and crossbar array, hybrid nonvolatile memory cells are generated. With its nonvolatile storage element, fast switching time, low power consumption, and good scalability, the hybrid memory cell of emerging technologies and CMOS would be one of the most promising candidates for the next generation of the nonvolatile memory.