NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, NONVOLATILE MEMORY DEVICE, AND DESIGN SUPPORT METHOD FOR NONVOLATILE MEMORY ELEMENT

摘要

A nonvolatile memory element includes a variable resistance layer located between a lower electrode and an upper electrode and having a resistance value that reversibly changes based on electrical signals applied between these electrodes. The variable resistance layer includes at least two layers: a first variable resistance layer including a first transition metal oxide; and a second variable resistance layer including a second transition metal oxide and a transition metal compound. The second transition metal oxide has an oxygen content atomic percentage lower than an oxygen content atomic percentage of the first transition metal oxide, the transition metal compound contains either oxygen and nitrogen or oxygen and fluorine, and the second transition metal oxide and the transition metal compound are in contact with the first variable resistance layer.