Resistive memory elements exhibiting increased interfacial adhesion strength, methods of forming the same, and related resistive memory cells and memory devices

摘要

A resistive memory element comprising a conductive material, an active material over the conductive material, and an ion source material on the active material and comprising at least one chalcogen, at least one active metal, and at least one additional element. Additional resistive memory elements, as well as methods of forming resistive memory elements, and related resistive memory cells and resistive memory devices are also described.