Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

摘要

The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfO/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfO/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfO layer. In the TiN/HfO/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfO layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfO/IL/TiN device.